ENHANCED OPTICAL PROPORTIES OF ????-Ga2O3−????S????: A DFT STUDY
DOI:
https://doi.org/10.65164/bfnxeq58Keywords:
Here, we use DFT calculations to conduct a systematic study of the structural,Abstract
Crystalline ????-Ga2O3 has received renewed interest in recent years as a strong candidate for power electronic and optoelectronic devices [1,2], UV photodetectors [3,4], sensors, and solar cells, due to its low- cost, large-area fabrication, suitable UV transmission properties, and high breakdown electric characteristics. The performance of Ga2O3-based devices strongly depends on the quality of the material and its structural properties [3]. One of the main drawbacks limiting the use of ????- Ga2O3-based devices in broader electronic applications is its wide band gap (4.5 to 4.8 eV) [5,6]. Ga2O3- based hybrid materials have been proposed as a promising approach for band gap engineering, where the combination of wide and narrow band gap materials optimizes the overall band structure, enhancing complex electronic and optical properties [7].
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