QATTIQ JISMLARDA FAZAVIY O’TISH JARAYONIDA ELEKTROFIZIK VA STRUKTURAVIY XOSSALARNING O’ZGARISHI
DOI:
https://doi.org/10.65164/507r3986Ключевые слова:
qattiq jism, yarimo‘tkazgich, fazaviy o‘tish, kristall, amorf holat, Messbauer spektroskopiyasi, izomer siljish, CdGeAs2, valentlik.Аннотация
Ushbu ishda CdGeAs2 yarimo‘tkazgich birikmasida kristall-amorf fazaviy o‘tish
jarayonida elektrofizik ва strukturaviy xossalarning o‘zgarishi tadqiq etilgan. Natijalar shuni
ko‘rsatdiki, fazaviy o‘tish jarayonida qalay atomlarining valentlik holati Sn+4 dan Sn+2 га o‘zgaradi,
bu esa materialning mikroelektronik xossalariga bevosita ta’sir ko‘rsatadi.
Библиографические ссылки
[1] Seregin, P. P., et al. Mossbauer Spectroscopy of Amorphous and Crystalline Semiconductors.
Journal of Non-Crystalline Solids, Vol. 552. 2021.
[2] Turaev, E. Yu., & Jumayeva, L. Sh. Investigation of the Structural Properties of Ternary
Semiconductor Compounds. International Journal of Physics and Mathematics, 5(2), 45-52. 2023
[3] Turaev E.Yu. «Modern Methods of Studying the Structure of Disordered Systems». International
Conference on Applied Physics and Materials Science, Proceedings, 2025.
